Polyimide Lined Gap Filler

文件：134.6 Kbytes Page：2 Pages

丝印代码：P3007L；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Features Low On-R

丝印代码：P3007；P-Channel Enhancement Mode MOSFET

GENERAL FEATURES ® Vos =30V1o =-50 Rosco 8.0mQ @Ves=-10V typ Reson 18m0 @V cs=-4 5V typ

丝印代码：P3009G；30V P-Channel MOSFETs

文件：556.56 Kbytes Page：5 Pages

丝印代码：P300BE；Nch 100V 36A Power MOSFET

文件：2.61936 Mbytes Page：15 Pages

丝印代码：P300BH；Nch 100V 39A Power MOSFET

文件：2.73 Mbytes Page：14 Pages

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

Druckkontaktierter IGBT Press Pack IGBT

Features  Trench IGBT 3  Press Pack IGBT  Hermetically sealed housing  Double side cooled  Long term Short on Fail behavior for minimum 1 year*  High dynamic robustness  High short-circuit capability  Low VCEsat

4500 V、3000 A 压接式 IGBT

\n优势:\n• Full long term short-on-fail\n• Explosion proofed housing\n• Highest power cycling capability\n• Double side cooling\n• Wide range of clamping force;

Druckkontaktierter IGBT Press Pack IGBT

Features  Trench IGBT 3  Press Pack IGBT  Hermetically sealed housing  Double side cooled  Long term Short on Fail behavior for minimum 1 year*  High dynamic robustness  High short-circuit capability  Low VCEsat

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

The SIDACtor짰 Series Modified TO-220 are designed to protect baseband

Description The SIDACtor® Series Modified TO-220 are designed to protect baseband equipment from damaging overvoltage transients. The series provides a robust single port through-hole solution that enables voice though DS-1 equipment to comply with various global regulatory standards. Features

Baseband Protection (Voice-DS1)

Features and Benefits ■ Low voltage overshoot ■ Low on-state voltage ■ Does not degrade with use ■ Modified TO-220 Package ■ Fails short circuit when surged in excess of ratings ■ Single-port protection ■ Lead forms available Applicable Global Standards ■TIA-968-A ■TIA-968-B ■ITU K

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

Baseband Protection (Voice-DS1)

Features and Benefits ■ Low voltage overshoot ■ Low on-state voltage ■ Does not degrade with use ■ Modified TO-220 Package ■ Fails short circuit when surged in excess of ratings ■ Single-port protection ■ Lead forms available Applicable Global Standards ■TIA-968-A ■TIA-968-B ■ITU K

The SIDACtor짰 Series Modified TO-220 are designed to protect baseband

Description The SIDACtor® Series Modified TO-220 are designed to protect baseband equipment from damaging overvoltage transients. The series provides a robust single port through-hole solution that enables voice though DS-1 equipment to comply with various global regulatory standards. Features

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

The SIDACtor짰 Primary Protection Series Modified TO-220 are thyristor devices

Description The SIDACtor® Series Modified TO-220 are designed to protect baseband equipment from damaging overvoltage transients. The series provides a robust single port through-hole solution that enables voice though DS-1 equipment to comply with various global regulatory standards. Features

Baseband Protection (Voice-DS1)

Features and Benefits ■ Low voltage overshoot ■ Low on-state voltage ■ Does not degrade with use ■ Modified TO-220 Package ■ Fails short circuit when surged in excess of ratings ■ Single-port protection ■ Lead forms available Applicable Global Standards ■TIA-968-A ■TIA-968-B ■ITU K

The SIDACtor짰 Series Modified TO-220 are designed to protect baseband

Description The SIDACtor® Series Modified TO-220 are designed to protect baseband equipment from damaging overvoltage transients. The series provides a robust single port through-hole solution that enables voice though DS-1 equipment to comply with various global regulatory standards. Features

Two-chip MicroCapacitance (MC) SIDACtor Device

Description MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect various types of broadband equipment from damaging overvoltage transients. The series provides a robust single port solution that enables equipment to comply with various global regulatory standards w

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

MC Series - Modified TO-220

Description MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect various types of broadband equipment from damaging overvoltage transients. The series provides a robust single port solution that enables equipment to comply with various global regulatory standards w

Two-chip MicroCapacitance

Description MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect various types of broadband equipment from damaging overvoltage transients. The series provides a robust single port solution that enables equipment to comply with various global regulatory standards w

The series provides a robust single port solution that enables equipment

Description MC Series Modified TO-220 are low capacitance SIDACtor® devices designed to protect various types of broadband equipment from damaging overvoltage transients. The series provides a robust single port solution that enables equipment to comply with various global regulatory standards w

DO-214AA Package Symbolization

DO-214AA Package Symbolization

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

DO-214AA Package Symbolization

DO-214AA Package Symbolization

gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

DO-214AA Package Symbolization

DO-214AA Package Symbolization

gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

DO-214AA Package Symbolization

DO-214AA Package Symbolization

gas plasma arresters-package dimensions/specifications

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, and CPE (telephones, answering machines, and fax machines). SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS     For use in gen

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifiers

Features ◆ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ◆ High surge current capability ◆ Typical IR less than 0.1uA ◆ Construction utilizes void-free molded plastic technique ◆ 3.0 Amperes operation at TA=90°C with no thermal runaway ◆ High temperature sol

AXIAL LEADED SILICON RECTIFIER DIODES

Features ● High Current Capability and Low Forward Voltage Drop ● Low Reverse Leakage Current ● Plastic Material: UL Flammability ● Classification Rating 94V-0

GENERAL PURPOSE PLASTIC RECTIFIER

FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Typical IR less than 0.1µA ♦ Construction utilizes void-free molded plastic technique ♦ 3.0 Ampere operation at TA=90°C with no thermal runaway ♦ High temperature solder

GENERAL PURPOSE SILICON RECTIFIER

FEATURES • Low cost construction. • Low forward voltage drop • Low reverse leakage • High forward surge current capability. 260°C/10 seconds, 0.375 (9.5mm)lead length at 5 lbs (2.3kg) tension. • High temperature soldering guaranteed:

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifiers

Features ◆ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ◆ High surge current capability ◆ Typical IR less than 0.1uA ◆ Construction utilizes void-free molded plastic technique ◆ 3.0 Amperes operation at TA=90°C with no thermal runaway ◆ High temperature sol

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS     For use in gen

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

GENERAL PURPOSE SILICON RECTIFIER

FEATURES • Low cost construction. • Low forward voltage drop • Low reverse leakage • High forward surge current capability. 260°C/10 seconds, 0.375 (9.5mm)lead length at 5 lbs (2.3kg) tension. • High temperature soldering guaranteed:

AXIAL LEADED SILICON RECTIFIER DIODES

Features ● High Current Capability and Low Forward Voltage Drop ● Low Reverse Leakage Current ● Plastic Material: UL Flammability ● Classification Rating 94V-0

GENERAL PURPOSE SILICON RECTIFIER

FEATURES • Low cost construction. • Low forward voltage drop • Low reverse leakage • High forward surge current capability. 260°C/10 seconds, 0.375 (9.5mm)lead length at 5 lbs (2.3kg) tension. • High temperature soldering guaranteed:

AXIAL LEADED SILICON RECTIFIER DIODES

Features ● High Current Capability and Low Forward Voltage Drop ● Low Reverse Leakage Current ● Plastic Material: UL Flammability ● Classification Rating 94V-0

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS     For use in gen

General Purpose Plastic Rectifiers

Features ◆ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ◆ High surge current capability ◆ Typical IR less than 0.1uA ◆ Construction utilizes void-free molded plastic technique ◆ 3.0 Amperes operation at TA=90°C with no thermal runaway ◆ High temperature sol

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene

General Purpose Plastic Rectifiers

Features ◆ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ◆ High surge current capability ◆ Typical IR less than 0.1uA ◆ Construction utilizes void-free molded plastic technique ◆ 3.0 Amperes operation at TA=90°C with no thermal runaway ◆ High temperature sol

General Purpose Plastic Rectifier

FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in gene