SIDACtor짰 Protection Thyristors Baseband Protection (Voice-DS1)

Description The SIDACtor® Balanced Series are designed to protect baseband equipment from damaging overvoltage transients. The patented Y configuration also ensures balanced overvoltage protection. The series provides a single port through-hole solution that enables voice through DS-1 equipment

高频高能浪涌保护

• 可提供强保持电流型号 • 可提供故障安全型号 • 低电压过冲 • 低通态电压 • 使用后不会降级 • 浪涌超过额定值时会发生短路故障 • 单端口保护 • 改进型TO-220封装 • 可提供引线类型\n\n\n\n\n\n\n\n\n;

Baseband Protection (Voice-DS1)

文件：167.41 Kbytes Page：5 Pages

封装/外壳：TO-220-3（SMT）标片 包装：管件 描述：THYRISTOR 200V 400A TO220-3 电路保护 TVS - 晶闸管

Low voltage overshoot Balanced overvoltage protection

Description The SIDACtor® Balanced Series are designed to protect baseband equipment from damaging overvoltage transients. The patented Y configuration also ensures balanced overvoltage protection. The series provides a single port through-hole solution that enables voice through DS-1 equipment

The series provides a single port through-hole solution that enables voice

Description The SIDACtor® Balanced Series are designed to protect baseband equipment from damaging overvoltage transients. The patented Y configuration also ensures balanced overvoltage protection. The series provides a single port through-hole solution that enables voice through DS-1 equipment

The SIDACtor짰 Primary Protection Balanced Series Modified TO-220 are thyristor devices designed

Description The SIDACtor® Balanced Series are designed to protect baseband equipment from damaging overvoltage transients. The patented Y configuration also ensures balanced overvoltage protection. The series provides a single port through-hole solution that enables voice through DS-1 equipment

封装/外壳：TO-220-3（SMT）标片 包装：管件 描述：THYRISTOR 200V 400A TO220-3 电路保护 TVS - 晶闸管

Zero Bias Silicon Schottky Barrier Detector Diodes in Hermetic Ceramic Packages

Features  High sensitivity  Low video impedance  Packages rated MSL1, 260 C per JEDEC J-STD-020)

Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode

Features: • High Speed: tf = 100nsec • High Breakdown Voltage: VCBO = 1500V • On–Chip Damper Diode

PLLatinum??Fractional N Single 2.5 GHz Frequency Synthesizer

文件：210.06 Kbytes Page：16 Pages

PLLatinum??Fractional N Single 2.5 GHz Frequency Synthesizer

文件：210.06 Kbytes Page：16 Pages

PLLatinum??Fractional N Single 2.5 GHz Frequency Synthesizer

文件：210.06 Kbytes Page：16 Pages