Description:

The OPB829 series consists of an infrared emitting diode and a NPN silicon phototransistor mounted on opposite sides of a .125” (3.18 mm) wide slot. The OPB829A has an IR transmissive housing. The OPB829B has a IR transmissive housing with an 0.010 (0.254 mm) aperture located in front of the phototransistor. The OPB829C has an opaque housing with a molded 0.060 (1.52 mm) aperture located in front of the phototransistor. The OPB829D has an opaque housing with a molded 0.010 (0.254 mm) aperture located in front of the phototransistor. Phototransistor switching takes place whenever an opaque object through the slot.

Features

● 24 min. #26 AWG wire leads

● 0.125 (3.08 mm) wide slot

● Inexpensive plastic housing