Description

The OPB821 series each consists of an infrared emitting diode and an NPN silicon phototransistor mounted in a low cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot.

Phototransistor switching takes place whenever an opaue object passes through the slot. All assemblies have 0.040” (1.02 mm) wide aperture located in front of the infrared diode.

Features:

• Three standard aperture sizes for high resolution

• Low profile, 0.080” (2.03 mm) wide slot

• 4.5 min, 26 AWG wire leads

• TX-TXV process available (see Hi-Rel section)