General Description

The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

Features

n-channel p-channel

VDS (V) = 30V -30V

ID = 7.5A -6.6A

RDS(ON)

< 28mΩ < 35mΩ (VGS = 10V)

< 43mΩ < 58mΩ (VGS = 4.5V)

Schottky

VDS=30V, IF=3A, VF