位置:UMC2NT1G > UMC2NT1G详情

UMC2NT1G中文资料

厂家型号

UMC2NT1G

文件大小

211.89Kbytes

页面数量

12

功能描述

Dual Common Base-Collector Bias Resistor Transistors

开关晶体管 - 偏压电阻器 100mA Complementary 50V Dual NPN & PNP

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

UMC2NT1G数据手册规格书PDF详情

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the UMC2NT1G series, two

complementary BRT devices are housed in the SOT−353 package

which is ideal for low power surface mount applications where board

space is at a premium.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

UMC2NT1G产品属性

  • 类型

    描述

  • 型号

    UMC2NT1G

  • 功能描述

    开关晶体管 - 偏压电阻器 100mA Complementary 50V Dual NPN & PNP

  • RoHS

  • 制造商

    ON Semiconductor

  • 晶体管极性

    NPN/PNP

  • 安装风格

    SMD/SMT

  • 封装/箱体

    直流集电极/Base Gain hfe

  • Min

    200 mA

  • 最大工作频率

    集电极—发射极最大电压

  • VCEO

    50 V

  • 集电极连续电流

    150 mA

  • 功率耗散

    200 mW

  • 封装

    Reel

更新时间:2025-12-3 13:31:00
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