位置:NVVR26A120M1WSS_V01 > NVVR26A120M1WSS_V01详情

NVVR26A120M1WSS_V01中文资料

厂家型号

NVVR26A120M1WSS_V01

文件大小

506.28Kbytes

页面数量

12

功能描述

Automotive 1200 V, 2.6 m N-Channel MOSFET, 400 A Half-Bridge Power Module

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NVVR26A120M1WSS_V01数据手册规格书PDF详情

Product Description

The NVVR26A120M1WSS is part of the VE−TRAC B2 SiC

family of highly integrated power modules for Hybrid (HEV) and

Electric Vehicle (EV) traction inverter application. The module

integrates 1200 V SiC MOSFET in a half−bridge configuration. To

enhance reliability and thermal performance, sintering technology is

applied for die attach. The module is designed to meet the AQG324

standard.

Features

• Ultra Low RDS(on)

• Aluminum Nitride Isolator

• Ultra−low Stray Inductance ~ 7.1 nH

• Tvj.Max = 175°C for Continuous Operation

• Automotive Grade SiC MOSFET Chip Technologies

• Sintered Die Technology for High Reliability Performance

• Automotive Module AQG324 Compliant

• PPAP Capable

Applications

• Automotive EV/HEV− Traction Inverter

更新时间:2025-12-16 8:01:00
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ONSEMI
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