Description

SuperFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss provide superior switching performance, and with−

stand extreme dv/dt rate. Consequently, SuperFET III MOSFET

Easy−drive series helps manage EMI issues and allows for easier

design implementation.

Features

• AEC−Q101 Qualified

• Max Junction Temperature 150°C

• Typ. RDS(on) = 19.9 mΩ

• Ultra Low Gate Charge (Typ. QG = 236 nC)

• Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)

• 100 Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Automotive PHEV−BEV DC−DC Converter

• Automotive Onboard Charger for PHEV−BEV