This logic level vertical power MOSFET is a general purpose part

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain−to−source diode has a ideal fast but soft recovery.

Features

• Ultra−Low RDS(on), Single Base, Advanced Technology

• SPICE Parameters Available

• Diode is Characterized for use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperatures

• High Avalanche Energy Specified

• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Supplies

• Inductive Loads

• PWM Motor Controls

• Replaces MTD20N03L in many Applications