Power MOSFET

30 V, 64 A, Single N−Channel, WDFN8

Features

• Integrated Schottky Diode

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free and are RoHS Compliant

Applications

• CPU Power Delivery

• Synchronous Rectification for DC−DC Converters

• Low Side Switching

• Telecom Secondary Side Rectification