Power MOSFET

30 V, 59 A, Single N−Channel, SO−8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Low RG

• These are Pb−Free Devices*

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters