位置:NSBC114EF3 > NSBC114EF3详情

NSBC114EF3中文资料

厂家型号

NSBC114EF3

文件大小

140.59Kbytes

页面数量

12

功能描述

Digital Transistors (BRT) R1 = 10 k, R2 = 10 k

Digital Transistors(BRT) R1 = 10 k, R2 = 10 k

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NSBC114EF3数据手册规格书PDF详情

Digital Transistors (BRT) R1 = 10 kΩ, R2 = 10 kΩ

NPN Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

NSBC114EF3产品属性

  • 类型

    描述

  • 型号

    NSBC114EF3

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Digital Transistors(BRT) R1 = 10 k, R2 = 10 k

更新时间:2025-11-29 23:00:00
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onsemi(安森美)
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SOT-1123-3
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三年内
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