This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Typical applications are AC−DC and DC−DC converters, reverse

battery protection, and “ORing” of multiple supply voltages and any

other application where performance and size are critical.

Features

• Ultra Low VF

• 1st in the Market Place with a 10 VR Schottky Rectifier

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard−Ring for Stress Protection

• NRVBS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 217 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead

• ESD Ratings: Machine Model = C

Human Body Model = 3B