This device employs the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Low Forward Voltage Drop

• NRVBS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94, V−0 @ 0.125 in.

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Maximum Temperature of 260°C/10 Seconds for Soldering

• Available in 12 mm Tape, 2500 Units per 13″ Reel,

Add “T3” Suffix to Part Number

• Cathode Polarity Band