This device employs the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes. Typical applications are

AC−DC and DC−DC converters, reverse battery protection, and

“Oring” of multiple supply voltages and any other application where

performance and size are critical.

Features

• Ultra Low VF

• 1st in the Market Place with a 10 VR Schottky Rectifier

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Optimized for Low Forward Voltage

• NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band Indicates Cathode Lead

• ESD Ratings:

♦ Machine Model = C

♦ Human Body Model = 3A