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NRTS660MFDT3G中文资料

厂家型号

NRTS660MFDT3G

文件大小

74.71Kbytes

页面数量

5

功能描述

Very Low Forward Voltage Trench-based Schottky Rectifier

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NRTS660MFDT3G数据手册规格书PDF详情

This trench Schottky rectifier in the dual flag SO−8 flat lead

package offers designers a unique degree of versatility and design

freedom. The two devices are electrically independent and can be used

separately, as common cathode, as common anode or in series as a

function of board level layout. The exposed pad design provides low

thermal resistance. The clip attach design creates a package with very

efficient die size to board area ratio. While thermal performance is

nearly the same as the DPAK package height and board footprint are

less than half.

Trench Schottky technology provides a superior forward voltage/

leakage tradeoff compared to planar Schottky. The reverse switching

characteristics are extremely stable over temperature minimizing

switching power loss in high frequency applications.

Features

• New Package Provides Capability of Inspection and Probe After

Board Mounting

• Low Forward Voltage Drop

• 175°C Operating Junction Temperature

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free and Halide−Free Devices

Mechanical Characteristics:

• Case: Epoxy, Molded

• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

• Lead Finish: 100 Matte Sn (Tin)

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL 1 Requirements

Applications

• Excellent Alternative to DPAK in Space−Constrained Automotive

Applications

• Output Rectification in Switching Power Supplies

• Freewheeling Diode used with Inductive Loads

• Automotive LED Lighting (Interior and Exterior)

更新时间:2026-2-13 8:31:00
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