Power MOSFET

9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Benefits

• High Energy Capability for Inductive Loads

• Low Switching Noise Generation

Features

• Diode Clamp Between Gate and Source

• ESD Protection − HBM 5000 V

• Active Over−Voltage Gate to Drain Clamp

• Scalable to Lower or Higher RDS(on)

• Internal Series Gate Resistance

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers