This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Ultra Field Stop Trench construction, and provides

superior performance in demanding switching applications, offering

both low on−state voltage and minimal switching loss. The IGBT is

well suited for UPS and solar applications. Incorporated into the device

is a soft and fast co−packaged free wheeling diode with a low forward

voltage.

Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• These are Pb−Free Devices

Typical Applications

• Solar Inverter

• Uninterruptible Power Inverter Supplies (UPS)

• Welding