位置:NCV8412ADDR2G > NCV8412ADDR2G详情

NCV8412ADDR2G中文资料

厂家型号

NCV8412ADDR2G

文件大小

351.13Kbytes

页面数量

19

功能描述

Self-Protected Low Side Driver with In-Rush Current Management

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NCV8412ADDR2G数据手册规格书PDF详情

The NCV8412 is a three terminal protected Low−Side Smart

Discrete FET. The protection features include Delta Thermal

Shutdown, overcurrent, overtemperature, ESD and integrated

Drain−to−Gate clamping for overvoltage protection. The device also

offers fault indication via the gate pin. This device is suitable for harsh

automotive environments.

Features

 Short−Circuit Protection with In−Rush Current Management

 Delta Thermal Shutdown

 Thermal Shutdown with Automatic Restart

 Overvoltage Protection

 Integrated Clamp for Overvoltage Protection and Inductive

Switching

 ESD Protection

 dV/dt Robustness

 Analog Drive Capability (Logic Level Input)

 NCV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101 Grade 1

Qualified and PPAP Capable

 These Devices are Pb−Free and are RoHS Compliant

Typical Applications

 Switch a Variety of Resistive, Inductive and Capacitive Loads

 Can Replace Electromechanical Relays and Discrete Circuits

 Automotive/Industrial

更新时间:2026-2-2 22:59:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ONSEMI
25+
N/A
18798
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onsemi
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8-SOIC
9350
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onsemi
25+
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66230
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ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
24+
13865
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ON/安森美
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120000
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ON/安森美
21+
SOIC-8
4760
只做原装正品
ON(安森美)
23+
SOIC-8
12728
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ON(安森美)
2511
SOIC-8
5425
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ON SEMICONDUCTOR
24+
con
35960
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