The NCP51560 are isolated dual−channel gate drivers

with 4.5−A/9−A source and sink peak current respectively. They are

designed for fast switching to drive power MOSFETs, and SiC

MOSFET power switches. The NCP51560 offers short and matched

propagation delays.

Two independent and 5 kVrms internal galvanic isolation from input

to each output and internal functional isolation between the two output

drivers allows a working voltage of up to 1500 VDC. This driver can be

used in any possible configurations of two low side, two high−side

switches or a half−bridge driver with programmable dead time.

An ENA/DIS pin shutdowns both outputs simultaneously when set

low or high for ENABLE or DISABLE mode respectively.

The NCP51560 offers other important protection functions such

as independent under−voltage lockout for both gate drivers and a Dead

Time adjustment function

Features

 Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver

 4.5 A Peak Source, 9 A Peak Sink Output Current Capability

 Independent UVLO Protections for Both Output Drivers

 Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V

for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds.

 Common Mode Transient Immunity CMTI > 200 V/ns

 Propagation Delay Typical 38 ns with

 5 ns Max Delay Matching per Channel

 5 ns Max Pulse−Width Distortion

 User Programmable Input Logic

 DISABLE Mode

 User Programmable Dead−Time

 Isolation & Safety

 5 kVrms Isolation for 1 Minute (per UL1577 Requirements)

 8000 VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements)

 CQC Certification per GB4943.1−2011

 SGS FIMO Certification per IEC 62386−1

 These are Pb−Free Devices

Typical Applications

 Motor Drives

 Isolated Converters in DC−DC and AC−DC Power Supply

 Server, Telecom, and Industrial Infrastructures