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NBRS2H100T3G中文资料
NBRS2H100T3G数据手册规格书PDF详情
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Overvoltage Protection
• Low Forward Voltage Drop
• NBR and NRVB Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable*
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings:
♦ Charged Device Model > 1000 V (Class C5)
♦ Human Body Model = 3B
• These Devices are Pb−Free and are RoHS Compliant
• Device Meets MSL1 Requirements
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
DO-214AA |
66000 |
ONSEMI/安森美全新特价NBRS2H100T3G即刻询购立享优惠#长期有货 |
|||
ONSEMI |
25+ |
NA |
4500 |
全新原装!优势库存热卖中! |
|||
ONSEMI |
24+ |
N/A |
54908 |
原装原装原装 |
|||
onsemi |
25+ |
SMB |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ONSEMI/安森美 |
25+ |
SMB |
860000 |
明嘉莱只做原装正品现货 |
|||
ONSEMI/安森美 |
24+ |
SMB |
60000 |
||||
ONSEMI/安森美 |
2450+ |
DO-214 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
24+ |
DO-214AA |
15524 |
原装正品,现货库存,1小时内发货 |
|||
ON |
SMB |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
ON/安森美 |
2019+PB |
SMB |
66540 |
原装正品 可含税交易 |
NBRS2H100T3G/BKN 价格
参考价格:¥1.2528
NBRS2H100T3G 资料下载更多...
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ONSEMI相关芯片制造商
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