Complementary Darlington Silicon Power Transistors

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

• Collector−Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) — MJH11018, 17

= 200 Vdc (Min) — MJH11020, 19

= 250 Vdc (Min) — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

• Monolithic Construction

• Pb−Free Packages are Available*