These devices employ the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Overvoltage Protection

• Low Forward Voltage Drop

• ESD Ratings:

♦ Human Body Model = 3B (> 16000 V)

♦ Machine Model = C (> 400 V)

• NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 95 mg (Approximately)

• Cathode Polarity Band

• Maximum Temperature of 260°C/10 Seconds for Soldering

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable