Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

Features

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

• HBM Class 3B, CDM(AEC) Class C5

• AEC−Q101 Qualified and PPAP Capable

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2,500 units per reel

• Cathode Polarity Band