These devices employ the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Over−Voltage Protection

• Low Forward Voltage Drop

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 95 mg (Approximately)

• Cathode Polarity Band

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable