Employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Optimized for Low Leakage Current

• NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL94, VO at 1/8″

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band Indicates Cathode Lead

• Available in 12 mm Tape, 5000 Units per 13 inch Reel

• Device Meets MSL1 Requirements

• ESD Ratings: Machine Model, C (>400 V)

Human Body Model, 3B (>8000 V)

• Marking: B1E2