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MBR2H200SFT1G中文资料
MBR2H200SFT1G数据手册规格书PDF详情
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. Because of its small size, it is ideal for use in
portable and battery powered products such as cellular and cordless
phones, chargers, notebook computers, printers, PDAs and PCMCIA
cards. Typical applications are AC−DC and DC−DC converters,
reverse battery protection, and “Oring” of multiple supply voltages
and any other application where performance and size are critical.
Features
Guardring for Stress Protection
Low Forward Voltage
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
These are Pb−Free Devices
Mechanical Characteristics
Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape
Device Marking: L2J
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL 1 Requirements
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
SOD123 |
20300 |
ONSEMI/安森美原装特价MBR2H200SFT1G即刻询购立享优惠#长期有货 |
|||
ONSEMI |
25+ |
SOD123 |
255000 |
原厂原装,价格优势 |
|||
onsemi |
25+ |
SOD-123FL |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Onsemi |
24+ |
SOD123 |
3200 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
Onsemi |
24+ |
SOD123 |
10000 |
只有原装 |
|||
ONSEMI/安森美 |
24+ |
SOD123 |
60000 |
||||
ONSEMI/安森美 |
18+ |
SOD-123F |
2766 |
原装现货 |
|||
ONSEMI/安森美 |
25+ |
SOD-123F |
860000 |
明嘉莱只做原装正品现货 |
|||
ONSEMI/安森美 |
19+ |
SOD123 |
4500 |
只做原装正品 |
|||
ONSEMI/安森美 |
24+ |
SOD123 |
4500 |
只做原装,欢迎询价,量大价优 |
MBR2H200SFT1G 价格
参考价格:¥0.3565
MBR2H200SFT1G 资料下载更多...
MBR2H200SFT1G相关电子新闻
MBR2H200SFT1G
MBR2H200SFT1G
2021-6-21
MBR2H200SFT1G 芯片相关型号
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ONSEMI相关芯片制造商
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