位置:L1N06C > L1N06C详情

L1N06C中文资料

厂家型号

L1N06C

文件大小

78.12Kbytes

页面数量

7

功能描述

SMARTDISCRETES TM MOSFET 1 Amp, 62 Volts, Logic Level N?묬hannel DPAK

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

L1N06C数据手册规格书PDF详情

SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur.

This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and Sensefet technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components. The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

Features

• Pb−Free Package is Available

更新时间:2025-10-10 11:00:00
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