Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.

Features

• -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, ID = -1.35 A

• Low Gate Charge (Typ. 18 nC)

• Low Crss (Typ. 11 pF)

• 100% Avalanche Tested