Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

Features

• - 1.5 A, - 500 V, RDS(on) = 10.5 Ω (Max.) @ VGS = - 10 V,

ID = - 0.75 A

• Low Gate Charge (Typ. 11 nC)

• Low Crss (Typ. 6.0 pF)

• 100% Avalanche Tested

• RoHS Compliant