Description

In the OptoHiT series, the FODM8801 is a first−of−kind

phototransistor, utilizing onsemi’s leading−edge proprietary process

technology to achieve high operating temperature characteristics, up

to 125°C. The opto−coupler consists of an aluminum gallium arsenide

(AlGaAs) infrared light−emitting diode (LED) optically coupled to a

phototransistor, available in a compact half−pitch, mini− flat, 4−pin

package. It delivers high current transfer ratio at very low input

current. The input−output isolation voltage, VISO, is rated at 3750

VACRMS.

Features

• Utilizing Proprietary Process Technology to Achieve High Operating

Temperature: Up to 125°C

• Guaranteed Current Transfer Ratio (CTR)

Specifications Across Full Temperature Range

♦ Excellent CTR Linearity at High−Temperature

♦ CTR at Very Low Input Current, IF

• High Isolation Voltage Regulated by Safety Agency:

C−UL / UL1577, 3750 VACRMS for 1 Minute and

DIN EN/IEC60747−5−5

• Compact Half−Pitch, Mini−Flat, 4−Pin Package

(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height)

• >5 mm Creepage and Clearance Distance

• Applicable to Infrared Ray Reflow, 245°C

• These are Pb−Free Devices

Applications

• Primarily Suited for DC−DC Converters

• Ground−Loop Isolation, Signal−Noise Isolation

• Communications – Adapters, Chargers

• Consumer – Appliances, Set−Top Boxes

• Industrial – Power Supplies, Motor Control, Programmable Logic Control