Features

■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V

■ Guaranteed operating temperature range of -40°C to +100°C

■ 3A peak output current for medium power MOSFET/IGBT

■ Fast switching speed

– 210ns max. propagation delay

– 65ns max pulse width distortion

■ Fast output rise/fall time

– Offers lower dynamic power dissipation

■ 250kHz maximum switching speed

■ Wide VDD operating range from 15V to 30V

■ Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)

■ Under voltage lockout protection (UVLO) with hysteresis – optimized for driving IGBTs

■ Safety and regulatory approvals

– UL1577, 5,000 VAC RMS for 1 min.

– DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage

• Minimum creepage distance of 8.0mm

• Minimum clearance distance of 8mm to 16mm (option TV or TSV)

• Minimum insulation thickness of 0.5mm

Applications

■ Plasma Display Panel

■ High performance DC/DC convertor

■ High performance switch mode power supply

■ High performance uninterruptible power supply

■ Isolated Power MOSFET/IGBT gate drive

Description

The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters.

The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.