Description

This N−Channel MOSFET is produced using ON Semiconductor’s

advanced POWERTRENCH process that has been tailored to

minimize the on−state resistance while maintaining superior switching

performance.

Features

• RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A

• Low FOM RDS(on)*QG

• Low Reverse Recovery Charge, Qrr

• Soft Reverse Recovery Body Diode

• Enables Highly Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100 UIL Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

• Renewable System