Features

• Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A

• Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A

• HBM ESD Protection Level > 3 kV Typical (Note 1)

• 100 UIL Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Conversion

General Description

This N−Channel logic Level MOSFETs are produced using

onsemi‘s advanced POWERTRENCH process that incorporates

Shielded Gate technology. This process has been optimized for the

on−state resistance and yet maintain superior switching performance.

G−S zener has been added to enhance ESD voltage level.