位置:FDMC6675BZ > FDMC6675BZ详情
FDMC6675BZ中文资料
FDMC6675BZ数据手册规格书PDF详情
Features
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
General Description
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
FDMC6675BZ产品属性
- 类型
描述
- 型号
FDMC6675BZ
- 功能描述
MOSFET -30V 20A P-Channel PowerTrench
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
N/A |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
2450+ |
N/A |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ONSemiconductor |
24+ |
NA |
3471 |
进口原装正品优势供应 |
|||
FAIRCHILD/仙童 |
25+ |
DFN8 |
12496 |
FAIRCHILD/仙童原装正品FDMC6675BZ即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
DFN3.3X3.3 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
ON |
19+21+ |
DFN |
6000 |
全新原装公司现货
|
|||
ON/安森美 |
24+ |
MSOP12 |
9600 |
原装现货,优势供应,支持实单! |
|||
NAN/安森美 |
21+ |
NA |
8500 |
一级代理品牌,价格优势原装正品准则 |
|||
仙童 |
24+ |
NA |
6800 |
||||
ON/安森美 |
2021+ |
NA |
9000 |
原装现货,随时欢迎询价 |
FDMC6675BZ 价格
参考价格:¥3.8526
FDMC6675BZ 资料下载更多...
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ONSEMI相关芯片制造商
Datasheet数据表PDF页码索引
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