Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently, SUPERFET II MOSFET

is very suitable for the switching power applications such as PFC,

server/telecom power, FPD TV power, ATX power and industrial

power applications.

Features

• Typ. RDS(on) = 54 m

• 850 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 270 nC)

• Low EOSS (Typ. 23 J @ 400 V)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 981 pF)

• 100 Avalanche Tested

• This Device is RoHS Compliant

Applications

• AC−DC Power Supply

• LED Lighting