Description

The FAN3223−25 family of dual 4 A gate drivers is designed to

drive N−channel enhancement−mode MOSFETs in low-side

switching applications by providing high peak current pulses during

the short switching intervals. The driver is available with either TTL

or CMOS input thresholds. Internal circuitry provides an

under−voltage lockout function by holding the output LOW until the

supply voltage is within the operating range. In addition, the drivers

feature matched internal propagation delays between A and B

channels for applications requiring dual gate drives with critical

timing, such as synchronous rectifiers. This also enables connecting

two drivers in parallel to effectively double the current capability

driving a single MOSFET.

The FAN322X drivers incorporate MillerDrive architecture for

the final output stage. This bipolar−MOSFET combination provides

high current during the Miller plateau stage of the MOSFET turn−on /

turn−off process to minimize switching loss, while providing

rail−to−rail voltage swing and reverse current capability.

The FAN3223 offers two inverting drivers and the FAN3224 offers

two non−inverting drivers. Each device has dual independent enable

pins that default to ON if not connected. In the FAN3225, each channel

has dual inputs of opposite polarity, which allows configuration as

non−inverting or inverting with an optional enable function using the

second input. If one or both inputs are left unconnected, internal

resistors bias the inputs such that the output is pulled LOW to hold the

power MOSFET OFF.

Features

 Industry−Standard Pinouts

 4.5 V to 18 V Operating Range

 5 A Peak Sink/Source at VDD = 12 V

 4.3 A Sink / 2.8 A Source at VOUT = 6 V

 Choice of TTL or CMOS Input Thresholds

 Three Versions of Dual Independent Drivers:

 Dual Inverting + Enable (FAN3223)

 Dual Non−Inverting + Enable (FAN3224)

 Dual−Inputs (FAN3225)

 Internal Resistors Turn Driver Off If No Inputs

 MillerDrive Technology

 12 ns / 9 ns Typical Rise/Fall Times (2.2 nF Load)

 Under 20 ns Typical Propagation Delay Matched within 1 ns to the

Other Channel

 Double Current Capability by Paralleling Channels

 8−Lead SOIC and 8−Lead SOIC Exposed Pad Package

 Rated from –40C to +125C Ambient

 Automotive Qualified to AEC-Q100

 These are Pb−Free Devices