Complementary Silicon Power Transistors

These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers for high power switching circuits.

• Fast Switching — tf = 90 ns (Max)

• Key Parameters Specified @ 100°C

• Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 V (Max) @ 8.0 A

• Complementary Pairs Simplify Circuit Designs