Complementary Silicon Power Transistors

These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.

Features

• Fast Switching -  tf= 90 ns (Max)

• Key Parameters Specified @ 100°C

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 1.0 V (Max) @ 8.0 A

• Complementary Pairs Simplify Circuit Designs

• Pb-Free Packages are Available*