Features

■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)

■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation

■ Current Transfer Ratio In Select Groups

■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)

■ Safety and Regulatory Approvals:

– UL1577, 4,170 VAC RMS for 1 Minute

– DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Applications

■ Power Supply Regulators

■ Digital Logic Inputs

■ Microprocessor Inputs

■ Appliance Sensor Systems

■ Industrial Controls

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.