These devices are designed for general purpose and low speed switching applications.

Features

• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0

• Collector−Emitter Sustaining Voltage at 100 mAdc

VCEO(sus)

= 80 Vdc (min) − BDX33B, BDX334B

= 100 Vdc (min) − BDX33C, BDX334C

• Low Collector−Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc

− BDX33B, 33C/34B, 34C

• Monolithic Construction with Build−In Base−Emitter Shunt Resistors

• These Devices are Pb−Free and are RoHS Compliant*