Darlington Complementary Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

Features

• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.

• Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEO(sus) = 80 Vdc (min) − BDW46

100 Vdc (min) − BDW42/BDW47

• Low Collector Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc

3.0 Vdc (max) @ IC = 10.0 Adc

• Monolithic Construction with Built−In Base Emitter Shunt resistors

• TO−220AB Compact Package

• Pb−Free Packages Are Available*