位置:AFGY160T65SPD-B4_V01 > AFGY160T65SPD-B4_V01详情

AFGY160T65SPD-B4_V01中文资料

厂家型号

AFGY160T65SPD-B4_V01

文件大小

2641.98Kbytes

页面数量

12

功能描述

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

AFGY160T65SPD-B4_V01数据手册规格书PDF详情

Features

 AEC−Q101 Qualified and PPAP Capable

 Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A

 Maximum Junction Temperature: TJ = 175C

 Positive Temperature Co−Efficient

 Tight Parameter Distribution

 High Input Impedance

 100% of the Parts are Dynamically Tested

 Short Circuit Ruggedness > 6 s @ 25C

 Copacked with Soft, Fast Recovery Extremefast Diode

 This Device is Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Benefits

 Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

 Rugged Transient Reliability

 Outstanding Parallel Operation Performance with Balance Current

Sharing

 Low EMI

Applications

 Traction Inverter for HEV/EV

 Auxiliary DC/AC Converter

 Motor Drives

 Other Power−Train Applications Requiring High Power Switch

更新时间:2025-10-11 17:21:00
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