This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification,

or as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Features

• Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)

• Small Compact Surface Mountable Package with J−Bend Leads

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Stress Protection

• ESD Ratings:

♦ Human Body Model = 3B (> 16000 V)

♦ Machine Model = C (> 400 V)

• SBRS8 Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 100 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Cathode Polarity Band