位置:98AON13773G > 98AON13773G详情

98AON13773G中文资料

厂家型号

98AON13773G

文件大小

481.25Kbytes

页面数量

11

功能描述

Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

98AON13773G数据手册规格书PDF详情

Features

• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A

• Maximum Junction Temperature : TJ = 175°C

• Positive Temperature Co−efficient

• Tight Parameter Distribution

• High Input Impedance

• 100% of the Parts are Dynamically Tested

• Short Circuit Ruggedness > 6 s @ 25°C

• Copacked with Soft, Fast Recovery Extremefast Diode

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

Benefits

• Very Low Conduction and Switching Losses for a High Efficiency

Operation in Various Applications

• Rugged Transient Reliability

• Outstanding Parallel Operation Performance with Balance Current

Sharing

• Low EMI

Applications

• Traction Inverter for HEV/EV

• Auxiliary DC/AC Converter

• Motor Drives

• Other Power−train Applications Requiring High Power Switch

更新时间:2025-12-5 15:53:00
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