General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for RDS(ON),

switching performance and ruggedness.

Features

• Max RDS(on) = 4 m at VGS = −4.5 V, ID = −18 A

• Max RDS(on) = 5.7 m at VGS = −2.5 V, ID = −16 A

• Max RDS(on) =11.5 m at VGS = −1.8 V, ID = −11 A

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability in a Widely Used

Surface Mount Package

• This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

• Load Switch

• Battery Management

• Power Management

• Reverse Polarity Protection