Introduction or Description

The FOD814 consists of two gallium arsenide infrared emitting

diodes, connected in inverse parallel, driving a silicon phototransistor

output in a 4−pin dual in−line package. The FOD817 Series consists of

a gallium arsenide infrared emitting diode driving a silicon

phototransistor in a 4−pin dual in−line package.

Features

• AC Input Response (FOD814)

• Current Transfer Ratio in Selected Groups

♦ FOD814: 20–300%

♦ FOD814A: 50–150%

♦ FOD817: 50–600%

♦ FOD817A: 80–160%

♦ FOD817B: 130–260%

♦ FOD817C: 200–400%

♦ FOD817D: 300–600%

• Minimum BVCEO of 70 V Guaranteed

• Safety and Regulatory Approvals

♦ UL1577, 5,000 VACRMS for 1 Minute

♦ DIN EN/IEC60747−5−5

• This Device is Pb−Free

Typical Applications

• FOD814 Series

♦ AC Line Monitor

♦ Unknown Polarity DC Sensor

♦ Telephone Line Interface

• FOD817 Series

♦ Power Supply Regulators

♦ Digital Logic Inputs

♦ Microprocessor Inputs