Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

• Extremely Low VF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• These are Pb−Free Devices*