This series employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low−voltage, high−frequency inverters, free wheeling diodes, and

polarity protection diodes.

Features

• Extremely Low VF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• These are Pb−Free Devices*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max for 10 Seconds

• Polarity: Cathode Indicated by Polarity Band

• ESD Ratings: Machine Model = C (>400 V)

Human Body Model = 3B (>8000 V)