DESCRIPTION

The MSM51V4400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM51V4400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.

FEATURES

• 1,048,576-word × 4-bit configuration

• Single 3.3V power supply, ±0.3V tolerance

• Input : LVTTL compatible, low input capacitance

• Output : LVTTL compatible, 3-state

• Refresh : 1024 cycles/16 ms

• Fast page mode, read modify write capability

• CAS before RAS refresh, hidden refresh, RAS-only refresh capability

• Multi-bit test mode capability

• Package options:

26/20-pin 300mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM51V4400E-xxSJ)

26/20-pin 300mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM51V4400E-xxTS-K)

xx indicates speed rank.